MOSIS WAFER ACCEPTANCE TESTS
                                         
          RUN: T92Y (MM_NON-EPI_THK-MTL)                    VENDOR: TSMC
   TECHNOLOGY: SCN018                                FEATURE SIZE: 0.18 microns
                                  Run type: DED


INTRODUCTION: This report contains the lot average results obtained by MOSIS
              from measurements of MOSIS test structures on each wafer of
              this fabrication lot. SPICE parameters obtained from similar
              measurements on a selected wafer are also attached.

COMMENTS: DSCN6M018_TSMC


TRANSISTOR PARAMETERS     W/L       N-CHANNEL P-CHANNEL  UNITS
                                                        
 MINIMUM                  0.27/0.18                     
  Vth                                    0.50     -0.49  volts
                                                        
 SHORT                    20.0/0.18                     
  Idss                                 572      -276     uA/um
  Vth                                    0.52     -0.49  volts
  Vpt                                    4.7      -5.2   volts
                                                        
 WIDE                     20.0/0.18                     
  Ids0                                  20.8     -15.2   pA/um
                                                        
 LARGE                    50/50                         
  Vth                                    0.42     -0.41  volts
  Vjbkd                                  3.7      -4.4   volts
  Ijlk                                 <50.0     <50.0   pA
                                                        
 K' (Uo*Cox/2)                         171.0     -37.0   uA/V^2
 Low-field Mobility                    406.07     87.86  cm^2/V*s
                                                        
COMMENTS: Poly bias varies with design technology. To account for mask
           bias use the appropriate value for the parameters XL and XW
           in your SPICE model card.
                       Design Technology                   XL (um)  XW (um)
                       -----------------                   -------  ------
                       SCN6M_DEEP (lambda=0.09)             0.00    -0.01
                                     thick oxide            0.00    -0.01
                       SCN6M_SUBM (lambda=0.10)            -0.02     0.00
                                     thick oxide           -0.02     0.00


FOX TRANSISTORS           GATE      N+ACTIVE  P+ACTIVE  UNITS
 Vth                      Poly         >6.6     <-6.6   volts


PROCESS PARAMETERS     N+    P+    POLY  N+BLK  PLY+BLK    M1     M2   UNITS
 Sheet Resistance       7.0   8.1  8.3    59.5   306.6    0.08   0.08  ohms/sq
 Contact Resistance     8.3   8.8  8.1                           4.83  ohms
 Gate Oxide Thickness  41                                              angstrom
                                                                      
PROCESS PARAMETERS     M3   POLY_HRI     M4      M5       M6    N_W     UNITS
 Sheet Resistance     0.08              0.08    0.07     0.01    951    ohms/sq
 Contact Resistance   9.74             15.36   21.50    23.45           ohms
                                                                       
COMMENTS: BLK is silicide block.


CAPACITANCE PARAMETERS  N+   P+  POLY M1 M2 M3 M4 M5 M6 R_W  D_N_W  M5P N_W  UNITS
 Area (substrate)      969 1234  101  34 14  9  7  5  4        129       130 aF/um^2
 Area (N+active)                8517  53 20 14 11  9  8                      aF/um^2
 Area (P+active)                8275                                         aF/um^2
 Area (poly)                          64 17 10  7  5  4                      aF/um^2
 Area (metal1)                           35 14  9  6  5                      aF/um^2
 Area (metal2)                              36 14  9  6                      aF/um^2
 Area (metal3)                                 37 14  9                      aF/um^2
 Area (metal4)                                    36 14                      aF/um^2
 Area (metal5)                                       35            1039      aF/um^2
 Area (r well)         953                                                   aF/um^2
 Area (d well)                                           562                 aF/um^2
 Area (no well)        140                                                   aF/um^2
 Fringe (substrate)    196  229       53 36 29 24 21 19                      aF/um
 Fringe (poly)                        68 38 29 23 19 18                      aF/um
 Fringe (metal1)                         49 34    22 20                      aF/um
 Fringe (metal2)                            45 35 27 23                      aF/um
 Fringe (metal3)                               54 34 30                      aF/um
 Fringe (metal4)                                  63 43                      aF/um
 Fringe (metal5)                                     66                      aF/um

CIRCUIT PARAMETERS                            UNITS      
 Inverters                     K                         
  Vinv                        1.0       0.74  volts      
  Vinv                        1.5       0.79  volts      
  Vol (100 uA)                2.0       0.08  volts      
  Voh (100 uA)                2.0       1.62  volts      
  Vinv                        2.0       0.83  volts      
  Gain                        2.0     -24.67             
 Ring Oscillator Freq.                                   
  D1024_THK (31-stg,3.3V)             302.91  MHz        
  DIV1024 (31-stg,1.8V)               377.13  MHz        
 Ring Oscillator Power                                   
  D1024_THK (31-stg,3.3V)               0.07  uW/MHz/gate
  DIV1024 (31-stg,1.8V)                 0.02  uW/MHz/gate
                                                         
COMMENTS: DEEP_SUBMICRON


+K1      = 0.5722049      K2      = 0.0219717      K3      = 0.1576753
+K3B     = 4.2763642      W0      = 1E-6           NLX     = 1.104212E-7
+DVT0W   = 0              DVT1W   = 0              DVT2W   = 0
+DVT0    = 0.6234839      DVT1    = 0.2479255      DVT2    = 0.1
+U0      = 109.4682454    UA      = 1.31646E-9     UB      = 1E-21
+UC      = -1E-10         VSAT    = 1.054892E5     A0      = 1.5796859
+AGS     = 0.3115024      B0      = 4.729297E-7    B1      = 1.446715E-6
+KETA    = 0.0298609      A1      = 0.3886886      A2      = 0.4010376
+RDSW    = 199.1594405    PRWG    = 0.5            PRWB    = -0.4947034
+WR      = 1              WINT    = 0              LINT    = 2.93948E-8
+XL      = 0              XW      = -1E-8          DWG     = -1.998034E-8
+DWB     = -2.481453E-9   VOFF    = -0.0935653     NFACTOR = 2
+CIT     = 0              CDSC    = 2.4E-4         CDSCD   = 0
+CDSCB   = 0              ETA0    = 3.515392E-4    ETAB    = -4.804338E-4
+DSUB    = 1.215087E-5    PCLM    = 0.96422        PDIBLC1 = 3.026627E-3