Mid Term Exam
October 25, 2005
V_{b} = 0.65V, V_{bi} = 0.5V, Ø_{m} = 4.7V, Ø_{s} = 4.2V, V_{n} = 0.146 V_{n} in the diagram is defined as,
where N_{C}, the effective density of states in the
conduction band, is |
Sketch the band diagram for an ideal Schottky contact made by placing a metal with a work function of 4.7 eV on silicon doped with 10^{17} donors/cm^{3}.