ELE533 Bipolar Devices

Mid Term Exam
October 25, 2005

Vb = 0.65V,   Vbi = 0.5V,   Øm = 4.7V,   Øs = 4.2V,   Vn = 0.146

Vn in the diagram is defined as,
EC - EF = VT ln[NC / ND]

where NC, the effective density of states in the conduction band, is
2.8x1019 cm-3

  1. Sketch the band diagram for an ideal Schottky contact made by placing a metal with a work function of 4.7 eV on silicon doped with 1017 donors/cm3.

    1. Is this a rectifying contact?   YES

    2. What is the Schottky barrier height?   Vb = 0.65V