An abrupt Si p-n junction has the following properties at 300 ^{o}K:
Property | P side | N side | Unit |
Doping | N_{A} = 10^{18 } | N_{D} = 5X10^{15 } | cm^{-3} |
Lifetime | t_{n} = 0.1 | t_{p} = 10 | uS |
Mobility | u_{n} = 250 | u_{n} = 1300 | cm^{2}/V-s |
Mobility | u_{p} = 100 | u_{p} = 400 | cm^{2}/V-s |
Draw the equilibrium energy band diagram for this junction, including numerical values for the Fermi level position relative to the intrinsic level on each side. Find the contact potential from the diagram.
Vn = Ef - Ei = Vt*ln[Nd/n_{i}] = 0.33Vp = Ei - Ef = Vt*ln[Na/n_{i}] = 0.46 V
Vbi = Vn + Vp = 0.793V