ELE533 Mid Term Question 2
An abrupt Si p-n junction has the following properties at 300 ^{o}K:
Property | P side | N side | Unit |
Doping | N_{A} = 10^{18 } | N_{D} = 5X10^{15 } | cm^{-3} |
Lifetime | t_{n} = 0.1 | t_{p} = 10 | uS |
Mobility | u_{n} = 250 | u_{n} = 1300 | cm^{2}/V-s |
Mobility | u_{p} = 100 | u_{p} = 400 | cm^{2}/V-s |
C_{JO} = [qeNd/2Vbi]^{1/2} = 2.25pFwhere e = the permitivity of silicon , e = 10^{-12}
C_{diff} = (I/Vt)X_{n}^{2}/2Dn = 169pF