Ele533 Bipolar Devices
Energy Bands

An abrupt Si p-n junction has the following properties at 300 oK:
Property P side n side Unit
Doping NA = 1015 ND = 1017 cm-3
Lifetime tn = 10 tp = 0.1 uS
Mobility un = 1300 up = 700 cm2/V-s
Mobility up = 450 un = 250 cm2/V-s
A = 10-4 cm-2

Draw the equilibrium energy band diagram for this junction, including numerical values for the Fermi level position relative to the intrinsic level on each side. Find the contact potential from the diagram.