Ele533 Bipolar Devices
Junction Capacitance

An abrupt Si p-n junction has the following properties at 300 oK:
Property P side n side Unit
Doping NA = 1015 ND = 1017 cm-3
Lifetime tn = 10 tp = 0.1 uS
Mobility un = 1300 up = 700 cm2/V-s
Mobility up = 450 un = 250 cm2/V-s
A = 10-4 cm-2

What is the zero bias junction capacitance for this diode?

What is the junction capacitance at a reverse bias of 5 Volts?

What is the breakdown voltage? (Since the doping is low, assume a critical field of 3X105  V/cm.)