Ele533 Old Exam Problem np junction 1

Consider a silicon pn junction. The p side is uniformly doped with 1018 acceptors/cm3. The n side is doped with 1016 donors/cm3.

  1. What is the built in potential?

  2. What is the position of the fermi level relative to the intrinsic level on the p side of the junction?

  3. The junction area is 10 microns by 10 microns. What is the saturation current, Is, in the equation,
    I = Is*eV/Vt
    Use the mobility vs doping curves.