ELE533 Bipolar Devices

MW 12:30-1:45 Kelley 203

Syllabus Fall 1997

  • Text: David J. Roulston, Bipolar Devices
    McGraw Hill ISBN 0-07-054120-5

  • Instructor: J. C. Daly Rm A120 Kelley-Annex,
    Tel 874-5844 daly@ele.uri.edu (email read often)
    Office Hours MWF 9-10AM MW 2-3PM

  • Assignments
  • No. Topic Date Due         Homework
    1.0 Semiconductor Properties 9/101.1, 1.2, 1.3, 1.4
    2.0 Heavy Doping 9/171.6, 1.7, 1.8, 1.10
    3.0 Reversed Biased PN Junctions     9/24 2.2, 2.3, 2.4
    4.0 Forward Biased PN Junctions10/1 2.7, 2.8. 2,10
    5.0 Junction Diodes 10/8 3.2, 3.3, 3.5
    6.0 High Frequency Diodes 10/15
    7.0 Practical Diodes 10/22
    8.0 Photo Diodes, Solar Cells 10/29
    Mid Term EXAM 11/5
    9.0 Bipolar Transistors 11/12
    10.0 BJT Emitters 11/19
    11.0 BJT Profiles 11/26
    12.0 High Current Effects
    13.0 Switching 12/10
    Final 12/198AM
  • GRADES
    Mid Term EXAM     40%
    Homework 10%
    Final 50%