MOSIS WAFER ACCEPTANCE TESTS RUN: T85R VENDOR: AMIS TECHNOLOGY: SCN05 FEATURE SIZE: 0.5 microns Run type: DED INTRODUCTION: This report contains the lot average results obtained by MOSIS from measurements of MOSIS test structures on each wafer of this fabrication lot. SPICE parameters obtained from similar measurements on a selected wafer are also attached. COMMENTS: American Microsystems, Inc. C5 TRANSISTOR PARAMETERS W/L N-CHANNEL P-CHANNEL UNITS MINIMUM 3.0/0.6 Vth 0.83 -0.94 volts SHORT 20.0/0.6 Idss 470 -250 uA/um Vth 0.70 -0.92 volts Vpt 10.0 -10.0 volts WIDE 20.0/0.6 Ids0 < 2.5 < 2.5 pA/um LARGE 50/50 Vth 0.72 -0.96 volts Vjbkd 11.2 -11.6 volts Ijlk <50.0 <50.0 pA Gamma 0.47 0.58 V^0.5 K' (Uo*Cox/2) 58.9 -18.7 uA/V^2 Low-field Mobility 477.61 151.63 cm^2/V*s COMMENTS: Poly bias varies with design technology. To account for mask bias use the appropriate value for the parameter XL in your SPICE model card. Design Technology XL (um) XW (um) ----------------- ------- ------ SCMOS_SUBM (lambda=0.30) 0.10 0.00 SCMOS (lambda=0.35) 0.00 0.20 FOX TRANSISTORS GATE N+ACTIVE P+ACTIVE UNITS Vth Poly >15.0 <-15.0 volts PROCESS PARAMETERS N+ P+ POLY PLY2_HR POLY2 M1 M2 UNITS Sheet Resistance 85.0 109.5 22.9 1058 39.1 0.09 0.09 ohms/sq Contact Resistance 68.5 149.4 15.6 24.5 0.88 ohms Gate Oxide Thickness 140 angstrom PROCESS PARAMETERS M3 N\PLY N_W UNITS Sheet Resistance 0.05 807 796 ohms/sq Contact Resistance 0.85 ohms COMMENTS: N\POLY is N-well under polysilicon. CAPACITANCE PARAMETERS N+ P+ POLY POLY2 M1 M2 M3 N_W UNITS Area (substrate) 423 735 86 31 16 9 37 aF/um^2 Area (N+active) 2461 37 16 12 aF/um^2 Area (P+active) 2385 aF/um^2 Area (poly) 874 59 15 9 aF/um^2 Area (poly2) 53 aF/um^2 Area (metal1) 30 12 aF/um^2 Area (metal2) 31 aF/um^2 Fringe (substrate) 336 212 66 48 32 aF/um Fringe (poly) 69 38 28 aF/um Fringe (metal1) 47 33 aF/um Fringe (metal2) 50 aF/um Overlap (N+active) 298 aF/um Overlap (P+active) 407 aF/um CIRCUIT PARAMETERS UNITS Inverters K Vinv 1.0 2.06 volts Vinv 1.5 2.32 volts Vol (100 uA) 2.0 0.12 volts Voh (100 uA) 2.0 4.87 volts Vinv 2.0 2.51 volts Gain 2.0 -18.77 Ring Oscillator Freq. DIV256 (31-stg,5.0V) 92.59 MHz D256_WIDE (31-stg,5.0V) 153.61 MHz Ring Oscillator Power DIV256 (31-stg,5.0V) 0.47 uW/MHz/gate D256_WIDE (31-stg,5.0V) 0.98 uW/MHz/gate COMMENTS: SUBMICRON T85R SPICE BSIM3 VERSION 3.1 PARAMETERS SPICE 3f5 Level 8, Star-HSPICE Level 49, UTMOST Level 8 * DATE: Aug 14/08 * LOT: t85r WAF: 1003 * Temperature_parameters=Default .MODEL nfet NMOS ( LEVEL = 49 +VERSION = 3.1 TNOM = 27 TOX = 1.4E-8 +XJ = 1.5E-7 NCH = 1.7E17 VTH0 = 0.6374091 +K1 = 0.8982415 K2 = -0.1028379 K3 = 31.8276298 +K3B = -9.950199 W0 = 1.003114E-8 NLX = 1E-9 +DVT0W = 0 DVT1W = 0 DVT2W = 0 +DVT0 = 0.7954543 DVT1 = 0.369766 DVT2 = -0.4941272 +U0 = 445.0586907 UA = 1E-13 UB = 1.068246E-18 +UC = 9.131065E-13 VSAT = 1.520524E5 A0 = 0.6539329 +AGS = 0.1256636 B0 = 2.296935E-6 B1 = 5E-6 +KETA = -2.411169E-3 A1 = 1.95721E-6 A2 = 0.3665483 +RDSW = 1.003705E3 PRWG = 0.1021022 PRWB = 0.0310575 +WR = 1 WINT = 2.533671E-7 LINT = 9.586445E-8 +XL = 1E-7 XW = 0 DWG = -1.483771E-9 +DWB = 4.85487E-8 VOFF = 0 NFACTOR = 0.745568 +CIT = 0 CDSC = 2.4E-4 CDSCD = 0 +CDSCB = 0 ETA0 = 9.427127E-3 ETAB = -1.929681E-3 +DSUB = 0.2609239 PCLM = 2.7215871 PDIBLC1 = 3.090061E-5 +PDIBLC2 = 3.844739E-3 PDIBLCB = 0.064868 DROUT = 0.0103615 +PSCBE1 = 6.191659E8 PSCBE2 = 1.492411E-4 PVAG = 0 +DELTA = 0.01 RSH = 85 MOBMOD = 1 +PRT = 0 UTE = -1.5 KT1 = -0.11 +KT1L = 0 KT2 = 0.022 UA1 = 4.31E-9 +UB1 = -7.61E-18 UC1 = -5.6E-11 AT = 3.3E4 +WL = 0 WLN = 1 WW = 0 +WWN = 1 WWL = 0 LL = 0 +LLN = 1 LW = 0 LWN = 1 +LWL = 0 CAPMOD = 2 XPART = 0.5 +CGDO = 2.98E-10 CGSO = 2.98E-10 CGBO = 1E-10 +CJ = 4.238155E-4 PB = 0.9320453 MJ = 0.4429752 +CJSW = 3.029259E-10 PBSW = 0.8 MJSW = 0.1879599 +CJSWG = 1.64E-10 PBSWG = 0.8 MJSWG = 0.1879599 +CF = 0 PVTH0 = 7.131408E-3 PRDSW = 360.8178698 +PK2 = -0.0763095 WKETA = -0.0198764 LKETA = -8.660741E-3 ) * .MODEL pfet PMOS ( LEVEL = 49 +VERSION = 3.1 TNOM = 27 TOX = 1.4E-8 +XJ = 1.5E-7 NCH = 1.7E17 VTH0 = -0.9152268 +K1 = 0.553472 K2 = 7.871921E-3 K3 = 51.3510604 +K3B = -0.8706515 W0 = 6.225262E-6 NLX = 2.235269E-7 +DVT0W = 0 DVT1W = 0 DVT2W = 0 +DVT0 = 1.1296262 DVT1 = 0.2659815 DVT2 = -0.0650358 +U0 = 201.3603195 UA = 2.408572E-9 UB = 1E-21 +UC = -1E-10 VSAT = 9.946551E4 A0 = 0.8830954 +AGS = 0.0807981 B0 = -5.021177E-8 B1 = 1.915399E-7 +KETA = -4.865785E-3 A1 = 2.60334E-4 A2 = 0.5589771 +RDSW = 3E3 PRWG = -0.030162 PRWB = -0.0443086 +WR = 1 WINT = 3.181856E-7 LINT = 1.184713E-7 +XL = 1E-7 XW = 0 DWG = 2.569941E-9 +DWB = 9.993851E-10 VOFF = -0.0750046 NFACTOR = 0.9004403 +CIT = 0 CDSC = 2.4E-4 CDSCD = 0 +CDSCB = 0 ETA0 = 5.581083E-4 ETAB = -0.2 +DSUB = 1 PCLM = 2.498226 PDIBLC1 = 0.0421992 +PDIBLC2 = 3.013914E-3 PDIBLCB = -0.0326568 DROUT = 0.2287629 +PSCBE1 = 1E8 PSCBE2 = 3.333683E-9 PVAG = 0.010259 +DELTA = 0.01 RSH = 109.5 MOBMOD = 1 +PRT = 0 UTE = -1.5 KT1 = -0.11 +KT1L = 0 KT2 = 0.022 UA1 = 4.31E-9 +UB1 = -7.61E-18 UC1 = -5.6E-11 AT = 3.3E4 +WL = 0 WLN = 1 WW = 0 +WWN = 1 WWL = 0 LL = 0 +LLN = 1 LW = 0 LWN = 1 +LWL = 0 CAPMOD = 2 XPART = 0.5 +CGDO = 4.07E-10 CGSO = 4.07E-10 CGBO = 1E-10 +CJ = 7.285322E-4 PB = 0.99 MJ = 0.4999883 +CJSW = 2.484081E-10 PBSW = 0.980213 MJSW = 0.421631 +CJSWG = 6.4E-11 PBSWG = 0.980213 MJSWG = 0.421631 +CF = 0 PVTH0 = 5.98016E-3 PRDSW = 14.8598424 +PK2 = 3.73981E-3 WKETA = 9.061855E-3 LKETA = -0.0101213 ) *