MOSIS WAFER ACCEPTANCE TESTS RUN: T93X (C5F_EPI) VENDOR: AMIS (ON-SEMI) TECHNOLOGY: SCN05 FEATURE SIZE: 0.5 microns Run type: SKD INTRODUCTION: This report contains the lot average results obtained by MOSIS from measurements of MOSIS test structures on each wafer of this fabrication lot. SPICE parameters obtained from similar measurements on a selected wafer are also attached. COMMENTS: SMSCN3ME06_ON-SEMI TRANSISTOR PARAMETERS W/L N-CHANNEL P-CHANNEL UNITS MINIMUM 3.0/0.6 Vth 0.76 -0.91 volts SHORT 20.0/0.6 Idss 479 -261 uA/um Vth 0.65 -0.89 volts Vpt 13.0 -12.0 volts WIDE 20.0/0.6 Ids0 < 2.5 < 2.5 pA/um LARGE 50/50 Vth 0.66 -0.94 volts Vjbkd 10.8 -11.9 volts Ijlk 72.5 <50.0 pA Gamma 0.48 0.56 V^0.5 K' (Uo*Cox/2) 57.5 -19.0 uA/V^2 Low-field Mobility 472.91 156.27 cm^2/V*s COMMENTS: Poly bias varies with design technology. To account for mask bias use the appropriate value for the parameter XL in your SPICE model card. Design Technology XL (um) XW (um) ----------------- ------- ------ SCMOS_SUBM (lambda=0.30) 0.10 0.00 SCMOS (lambda=0.35) 0.00 0.20 FOX TRANSISTORS GATE N+ACTIVE P+ACTIVE UNITS Vth Poly >15.0 <-15.0 volts PROCESS PARAMETERS N+ P+ POLY PLY2_HR POLY2 M1 M2 UNITS Sheet Resistance 85.2 109.2 23.8 1085 40.5 0.09 0.09 ohms/sq Contact Resistance 62.0 157.0 16.1 25.4 0.90 ohms Gate Oxide Thickness 142 angstrom PROCESS PARAMETERS M3 N\PLY N_W UNITS Sheet Resistance 0.05 812 806 ohms/sq Contact Resistance 0.81 ohms COMMENTS: N\POLY is N-well under polysilicon. CAPACITANCE PARAMETERS N+ P+ POLY POLY2 M1 M2 M3 N_W UNITS Area (substrate) 415 712 85 29 12 8 92 aF/um^2 Area (N+active) 2440 37 16 12 aF/um^2 Area (P+active) 2357 aF/um^2 Area (poly) 868 66 15 9 aF/um^2 Area (poly2) 57 aF/um^2 Area (metal1) 30 12 aF/um^2 Area (metal2) 32 aF/um^2 Fringe (substrate) 366 249 49 33 26 aF/um Fringe (poly) 66 38 27 aF/um Fringe (metal1) 50 32 aF/um Fringe (metal2) 49 aF/um Overlap (N+active) 184 aF/um Overlap (P+active) 241 aF/um CIRCUIT PARAMETERS UNITS Inverters K Vinv 1.0 2.02 volts Vinv 1.5 2.27 volts Vol (225 uA) 2.0 0.25 volts Voh (225 uA) 2.0 4.71 volts Vinv 2.0 2.46 volts Gain 2.0 -16.69 Ring Oscillator Freq. DIV256 (31-stg,5.0V) 106.51 MHz D256_WIDE (31-stg,5.0V) 159.58 MHz Ring Oscillator Power DIV256 (31-stg,5.0V) 0.49 uW/MHz/gate D256_WIDE (31-stg,5.0V) 1.01 uW/MHz/gate COMMENTS: SUBMICRON T93X SPICE BSIM3 VERSION 3.1 PARAMETERS SPICE 3f5 Level 8, Star-HSPICE Level 49, UTMOST Level 8 * DATE: Jun 23/09 * LOT: T93X WAF: 1101 * Temperature_parameters=Default .MODEL nfet NMOS ( LEVEL = 49 +VERSION = 3.1 TNOM = 27 TOX = 1.42E-8 +XJ = 1.5E-7 NCH = 1.7E17 VTH0 = 0.6016005 +K1 = 0.9443225 K2 = -0.1133787 K3 = 25.4656036 +K3B = -8.511885 W0 = 1.067822E-8 NLX = 1E-9 +DVT0W = 0 DVT1W = 0 DVT2W = 0 +DVT0 = 0.7840513 DVT1 = 0.3287764 DVT2 = -0.5 +U0 = 453.6276921 UA = 1.03161E-13 UB = 1.447392E-18 +UC = -7.50981E-14 VSAT = 2E5 A0 = 0.6164252 +AGS = 0.1245654 B0 = 2.369807E-6 B1 = 5E-6 +KETA = -6.89452E-3 A1 = 0 A2 = 0.3 +RDSW = 916.2918326 PRWG = 0.1544315 PRWB = 0.0516706 +WR = 1 WINT = 2.136244E-7 LINT = 7.925173E-8 +XL = 1E-7 XW = 0 DWG = -1.047546E-8 +DWB = 4.065077E-8 VOFF = -9.263199E-5 NFACTOR = 0.9941433 +CIT = 0 CDSC = 2.4E-4 CDSCD = 0 +CDSCB = 0 ETA0 = 1.557647E-3 ETAB = 0.1498729 +DSUB = 0.1613682 PCLM = 0.7387149 PDIBLC1 = 0.0163083 +PDIBLC2 = 1.535502E-3 PDIBLCB = 0.1864788 DROUT = 0.05 +PSCBE1 = 5.576893E8 PSCBE2 = 3.78474E-4 PVAG = 6.797846E-3 +DELTA = 0.01 RSH = 85.2 MOBMOD = 1 +PRT = 0 UTE = -1.5 KT1 = -0.11 +KT1L = 0 KT2 = 0.022 UA1 = 4.31E-9 +UB1 = -7.61E-18 UC1 = -5.6E-11 AT = 3.3E4 +WL = 0 WLN = 1 WW = 0 +WWN = 1 WWL = 0 LL = 0 +LLN = 1 LW = 0 LWN = 1 +LWL = 0 CAPMOD = 2 XPART = 0.5 +CGDO = 1.84E-10 CGSO = 1.84E-10 CGBO = 1E-9 +CJ = 4.159658E-4 PB = 0.8447831 MJ = 0.4331676 +CJSW = 3.570064E-10 PBSW = 0.8 MJSW = 0.1935282 +CJSWG = 1.64E-10 PBSWG = 0.8 MJSWG = 0.1935282 +CF = 0 PVTH0 = -0.0200699 PRDSW = 500 +PK2 = -0.0738424 WKETA = 1.467419E-3 LKETA = 0.0352545) * .MODEL pfet PMOS ( LEVEL = 49 +VERSION = 3.1 TNOM = 27 TOX = 1.42E-8 +XJ = 1.5E-7 NCH = 1.7E17 VTH0 = -0.9152268 +K1 = 0.553472 K2 = 7.871921E-3 K3 = 0.6477958 +K3B = -0.3376313 W0 = 1E-8 NLX = 7.511924E-8 +DVT0W = 0 DVT1W = 0 DVT2W = 0 +DVT0 = 0.7100998 DVT1 = 0.3266298 DVT2 = -0.3 +U0 = 201.3603195 UA = 2.408572E-9 UB = 1E-21 +UC = -1E-10 VSAT = 1.207463E5 A0 = 0.7752573 +AGS = 0.0890183 B0 = 5.603052E-7 B1 = 0 +KETA = -4.865785E-3 A1 = 2.287113E-4 A2 = 0.4635424 +RDSW = 3E3 PRWG = -0.0300381 PRWB = -0.0443914 +WR = 1 WINT = 2.430525E-7 LINT = 1.184313E-7 +XL = 1E-7 XW = 0 DWG = -4.021717E-9 +DWB = -2.343279E-8 VOFF = -0.0702582 NFACTOR = 0.9958059 +CIT = 0 CDSC = 2.4E-4 CDSCD = 0 +CDSCB = 0 ETA0 = 0 ETAB = -0.2 +DSUB = 1 PCLM = 2.4542296 PDIBLC1 = 0.0556662 +PDIBLC2 = 4.005713E-3 PDIBLCB = -0.0420583 DROUT = 0.2447873 +PSCBE1 = 1E8 PSCBE2 = 3.344883E-9 PVAG = 0.0149964 +DELTA = 0.01 RSH = 109.2 MOBMOD = 1 +PRT = 0 UTE = -1.5 KT1 = -0.11 +KT1L = 0 KT2 = 0.022 UA1 = 4.31E-9 +UB1 = -7.61E-18 UC1 = -5.6E-11 AT = 3.3E4 +WL = 0 WLN = 1 WW = 0 +WWN = 1 WWL = 0 LL = 0 +LLN = 1 LW = 0 LWN = 1 +LWL = 0 CAPMOD = 2 XPART = 0.5 +CGDO = 2.41E-10 CGSO = 2.41E-10 CGBO = 1E-9 +CJ = 7.107565E-4 PB = 0.8686049 MJ = 0.488304 +CJSW = 2.508566E-10 PBSW = 0.8 MJSW = 0.2099334 +CJSWG = 6.4E-11 PBSWG = 0.8 MJSWG = 0.2099334 +CF = 0 PVTH0 = 5.98016E-3 PRDSW = 14.8598424 +PK2 = 3.73981E-3 WKETA = 0.0132262 LKETA = -0.0105584) *